FIELD: metallurgy.
SUBSTANCE: invention relates to non-ferrous metallurgy, namely to production of sputtering molybdenum targets and can be used in microelectronics to apply coatings by thin-film metallisation. The method involves a consistent deep vacuum refining by electron-beam remelting of a high-purity metal-ceramic bar obtaining monocrystalline or polycrystalline molybdenum. Whereupon a semi-finished target shaped as a monocrystalline or polycrystalline ingot is formed from the obtained product using electron-beam remelting in the horizontal or vertical mold. The ingot produced is then machined.
EFFECT: improved quality and reliability of the barrier and conducting films when sputtering cast high-purity molybdenum targets.
3 cl, 1 dwg, 1 ex
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