METHOD FOR FORMING TRANSISTOR EMITTER ZONE Russian patent published in 2015 - IPC H01L21/225 

FIELD: electricity.

SUBSTANCE: diffusion method of phosphorus out of solid planar source includes formation of diffusion silicon patterns with use of solid planar source of phosphorus. The process is carried out at temperature of 900°C at the stage of predeposition diffusion with the following ratio of components: O₂=40±0.5 l/h; N₂=750 l/h; H₂=8 l/h and time equal to 40 minutes, at the stage of up-diffusion the process is carried out at temperature of 1000°C with the following gas consumption: O₂=40±0.5 l/h; N₂=750 l/h and time of up-diffusion equal to 75 hours.

EFFECT: reduced temperature and time of the process, accurate regulation of diffusion layer depth, larger depth and improved output percentage of ready products.