PRODUCTION OF POWER TRANSISTOR SOURCE AREA Russian patent published in 2015 - IPC H01L21/225 

FIELD: process engineering.

SUBSTANCE: invention relates to semiconductor technology and production of high-power silicon transistors, particularly, to making of transistor source area. In compliance with claimed process, diffusion is effected with the help of solid planar phosphorus source at phosphorus spin-on step at 1125°C for 40 minutes at the following ratio of components: O₂ - 40±0.5 l/h, N₂ - 750 l/h, H₂ - 8 l/h. at phosphorus drive-in step, it is performed at 1250°C and the following low rate of components: O₂ - 40±0.5 l/h and nitrogen N₂ - 750 l/h, cycle making 72 h.

EFFECT: optimised process, lower process temperature and decreased cycle, precise control over alloying ply depth, higher yield.