METHOD OF P-REGION FORMATION Russian patent published in 2014 - IPC H01L21/225 

FIELD: chemistry.

SUBSTANCE: invention relates to the technology of carrying out gallium diffusion to form a p-region in manufacturing semiconductor devices. In the method of the p-region formation powder-like gallium oxide (Ga₂O₃) is used as a diffusant source. The process is carried out in two stages: 1 - gallium predeposition and 2 - gallium distillation in one tube. Predeposition and distillation are carried out at the process temperature of 1220°C, the predeposition time equals 30 minutes and the distillation time equals 130 minutes. Superficial resistance at the predeposition stage is 320±10 Ohm/cm, and at the distillation stage - 220±10 Ohm/cm.

EFFECT: invention provides the reduction of scatter of the surface concentration values and obtaining a uniform doping on the entire surface of substrates.