FIELD: physics.
SUBSTANCE: claimed method consists in a complete oxide removal from the plate surface in solution composed of hydrofluoric acid and deionised water at the room temperature of said solution. Oxide removal is considered terminated in case this solution rolls from the surface of silicon plate back. Silicon plate surface processing reaction occurs at a high rate while process duration does not exceed 20 seconds. Note here that it does not cause the silicon plate surface quality deterioration.
EFFECT: removal of oxide residues before evaporation facilitates the adhesion, hence, higher yield.
3 ex
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