FACILITY FOR PLASMA CHEMICAL SEDIMENTATION FROM GASEOUS PHASE AND PROCEDURE FOR WORK PIECE FABRICATION Russian patent published in 2009 - IPC C23C16/511 C23C16/46 C23C16/52 C03B37/18 H01J7/32 

FIELD: metallurgy.

SUBSTANCE: invention refers to facility for plasma chemical sedimentation from gaseous phase (PCVD), to procedure of work piece fabrication (versions), to procedure of optical fibre fabrication (versions) and to furnace for maintaining temperature of base plate during procedure of PCVD. One or more alloyed or non alloyed layers are applied on internal surface of the glass tube of the base plate by means of PCVD procedure. The facility consists of an applicator with internal and external walls and a wave conductor opening into the applicator. The applicator continues around the cylinder axis and is equipped with a passage adjoining the internal wall; microwaves go out through this passage. The tube of the base plate is arranged along the cylinder axis of the applicator. At least one throttle groove of a circular shape is made in the applicator; the groove has length 1 and width b; the width is centred around the cylinder axis inside the applicator.

EFFECT: raised efficiency of procedure of plasma chemical sedimentation form gaseous phase and decreased leak of high frequency energy from applicator during PCVD procedure.

31 cl, 5 dwg