HETEROSTRUCTURES SiC/Si AND Diamond/SiC/Si, AND ALSO METHODS OF THEIR SYNTHESIS Russian patent published in 2013 - IPC H01L21/205 C23C28/00 C30B25/00 C23C16/32 

FIELD: electricity.

SUBSTANCE: heteroepitaxial semiconductor film on a single-crystal silicon substrate is grown by the method of chemical deposition from the gas phase. Synthesis of the heterostructure SiC/Si is carried out on a single-crystal silicon substrate in a horizontal reactor with hot walls by means of formation of a transition layer between the substrate and the film of the silicon carbide with the speed of not more than 100 nm/hour with heating of the specified substrate to the temperature from 700 to 1050°C with application of a gas mixture containing 95-99% of hydrogen and the following sources of silicon and carbon SiH₄, C₂H₆, C₃H₈, (CH₃)₃SiCl, (CH₃)₂SiCl₂, at the same time C/Si≥2, and formation of the single-crystal film of silicon carbide with the help of supplu of steam and gas mixture of hydrogen and CH₃SiCl₃ into the reactor while maintaining absolute pressure in the reactor in the range from 50 to 100 mm of mercury column. The silicon substrate is a plate that has an angle of inclination of crystallographic direction (111) in direction (110) from 1 to 30 of angular degrees and in direction (101) from 1 to 30 angular degrees.

EFFECT: improved compatibility of two materials of a silicon carbide layer and a silicon substrate with different period of crystalline lattices, at the same time mechanical stresses in a heterostructure are reduced, and lower densities of defects in a layer of silicon carbide are achieved.

6 cl, 3 dwg, 3 ex