METHOD OF MAKING NITRIDE SEMICONDUCTOR AND P-TYPE NITRIDE SEMICONDUCTOR DEVICE Russian patent published in 2009 - IPC H01L21/20 H01L33/00 

FIELD: physics.

SUBSTANCE: method of making a p-type nitride semiconductor involves: growing a p-type nitride semiconductor with a multilayer structure, with several high-concentration thin films and several low-concentration thin films, lying alternately; and annealing the p-type nitride semiconductor to improve its electrical properties. The p-type nitride semiconductor with a multilayer structure is grown through modulation doping, where flow of p-type dopant source for high-concentration thin films is at least twice greater than flow of p-type dopant source for low-concentration thin films. A nitride semiconductor light-emitting device with an active layer of the said p-type nitride semiconductor is also proposed.

EFFECT: obtaining a multilayer p-type nitride semiconductor with high conductivity and high crystallinity.

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