METHOD FOR SILICON DOPING WITH PHOSPHOR AND FOR GROWING OXIDE ON SILICON IN VAPOR ENVIRONMENT Russian patent published in 2005 - IPC

FIELD: doping silicon with phosphor using solid doping material source.

SUBSTANCE: proposed method includes installation of silicon wafer in spatial relation to solid source of doping phosphor material at first temperature for time sufficient for phosphor-containing layer to settle down on wafer surface followed by oxidation of doped silicon wafer with humid oxygen or pyrogenic vapor at second temperature which is lower than first temperature. Silicon wafer is held in spatial relation to solid source of doping phosphor material during oxidation stage. Temperature chosen for the purpose allows for solid source of doping phosphor material to evolve P₂O₃ at first temperature while second temperature is sufficiently low compared with first temperature to reduce evolution of P₂O₃ from solid source of doping phosphor material during oxidation stage. Doped wafer is oxidized while it is in immediate proximity of solid source. In this way, desired thickness of oxide layer formed on phosphor-doped silicon wafer is obtained at rather low temperature and short oxidation time.

EFFECT: enhanced service life of solid source and reduced oxidation temperature and time.

44 cl, 6 dwg, 2 tbl