METHOD OF MAKING SEMICONDUCTOR DEVICE Russian patent published in 2009 - IPC H01L21/44 

FIELD: physics.

SUBSTANCE: method of making a semiconductor device involves successive formation of active regions of the semiconductor device, silicon dioxide and deposition of an aluminium film. The formed semiconductor structure is exposed to photons with energy ranging from 20 to 35 eV with intensity of the photon beam ranging from 10¹¹ to 10¹² cm² s^-1, with subsequent thermostabilising burning at temperature ranging from 300 to 400°C for 30 to 50 s.

EFFECT: increased adhesion in semiconductor structures, technological effectiveness, improved parametres, increased reliability and increased percentage yield.