METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE Russian patent published in 2021 - IPC H01L29/04 

FIELD: semiconductor devices.

SUBSTANCE: invention relates to the field of technology for the production of semiconductor devices, in particular to the technology for the manufacture of structures with a low defect rate. The method is implemented as follows: on silicon plates with orientation (100), (111), a GeSi heterostructure is formed by applying germanium to silicon at a pressure of 2*10^-5 Pa, with an amorphous film layer thickness of 150 nm, with a deposition rate of 3 nm/s, followed by exposure to a single electron beam pulse with an electron energy of 25 keV and subsequent electron beam annealing at 0.8 J/cm² in a hydrogen atmosphere for 12 minutes at a temperature of 325°C. The active regions of the semiconductor device and the contacts to these areas were formed according to standard technology.

EFFECT: reducing the density of defects, ensuring manufacturability, improving the parameters of devices, improving quality and increasing the percentage of usable products.

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