METHOD OF MAKING THIN LAYER OF SILICON DIOXIDE Russian patent published in 2015 - IPC H01L21/316 

FIELD: physics.

SUBSTANCE: invention relates to the technology of producing semiconductor devices, particularly the technology of making a thin gate layer of silicon dioxide with high dielectric strength. The method of making a thin layer of silicon dioxide includes two-step thermal oxidation of silicon: first at a low temperature in wet oxygen and then at a higher temperature in an atmosphere of dry oxygen with addition of trichloroethylene C₂HCl₃.

EFFECT: invention increases dielectric strength of silicon dioxide, which provides technological effectiveness, improves parameters, improves reliability and increases the output of non-defective products.

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