METHOD FOR INCREASING ADHESION Russian patent published in 2021 - IPC H01L21/02 H01L21/44 

FIELD: electronic equipment.

SUBSTANCE: invention relates to the field of technology for production of semiconductor devices, in particular to a technology for increasing adhesion to a semiconductor structure. The technology of the method consists in the following, in the production of semiconductor devices, after the formation of active regions, silicon dioxide and deposition of metallization, the semiconductor structure is treated with a laser with an energy density in a pulse of 2-5 J/cm², followed by annealing at a temperature of 1000°С in a nitrogen atmosphere for 7 minutes.

EFFECT: increasing adhesion, ensuring manufacturability, improving the parameters of devices, improving the quality and increasing the percentage of yield.

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