FIELD: production of semiconductor devices.
SUBSTANCE: proposed method for manufacturing semiconductor structure includes formation of insulator on semiconductor substrate and formation of thin silicon film on insulator. Structure obtained is treated upon formation of silicon film with boron ions at dose rate of (1 - 3)1012 cm-2 and energy of 25-35 keV followed by annealing at temperature of 200-300 °C for 15-20 s.
EFFECT: reduced leakage current, facilitated manufacture, improved parameters, enhanced reliability and yield.
1 cl, 1 tbl
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| FABRICATION OF SEMICONDUCTOR STRUCTURE | 2012 |
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| METHOD FOR MANUFACTURING DIELECTRIC INSULATION | 2017 |
|
RU2660212C1 |
| SEMICONDUCTOR DEVICE MANUFACTURING METHOD | 2018 |
|
RU2688874C1 |
| METHOD FOR MANUFACTURING OF SHALLOW JUNCTIONS | 2020 |
|
RU2748335C1 |
