MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Russian patent published in 2016 - IPC H01L21/335 

FIELD: electricity.

SUBSTANCE: semiconductor device manufacturing method includes processes of doping, forming areas of source, drain and gate, at that the semiconductor device is formed by sequential application of a layer of p-type with thickness of 5 nm with doping concentration of 2·10¹¹ cm^-2, growth of silicone layer with thickness of 0.25 mcm and further cooling of antimony at temperature of 650°C and exposure during two minutes at temperature of 750°C in order to form a monolayer with concentration of antimony atoms of 2·10¹² cm^-2 and annealing at temperature of 750°C during 10 minutes.

EFFECT: semiconductor device manufacturing method by forming a doped layer of p-type serving as a barrier for electrons allows increase in production output of fit structures and improvement of their reliability.

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