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IPC

H01L21/28(2006-01-01)

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Application

2014128408/28, 2014-07-10

(24)

Start date

2014-07-10

(22)

Actual filing date

2014-07-10

(45)

Published

2015-11-10

(72)

Inventor

Mustafaev Gasan AbakarovichMustafaev Abdulla GasanovichMustafaev Arslan GasanovichCherkesova Natal'Ja Vasil'Evna

(73)

Holder

Federal'Noe Gosudarstvennoe Bjudzhetnoe Obrazovatel'Noe Uchrezhdenie Vysshego Professional'Nogo Obrazovanija Kabardino-Balkarskij Gosudarstvennyj Universitet Im. Kh.M. Berbekova

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Russian patent published in 2015 - IPC H01L21/28

Abstract RU 2567118 C1

FIELD: electricity.

SUBSTANCE: in manufacturing method of semiconductor device active areas of semiconductor device and film of silicone dioxide are formed, a layer of molybdenum film is applied with thickness of 400 nm, then the structure is processed with argon Ar⁺ ions with energy of 130-160 keV and dose of 5*10¹⁵-1*10¹⁶cm^-2 with further thermostabilised annealing at temperature of 600-700°C during 40-60 seconds.

EFFECT: improved adhesion in semiconductor structures, which improves fabricability, reliability and yield percent of fit structures.

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RU 2 567 118 C1

Authors

Mustafaev Gasan Abakarovich

Mustafaev Abdulla Gasanovich

Mustafaev Arslan Gasanovich

Cherkesova Natal'Ja Vasil'Evna

Dates

2015-11-10—Published

2014-07-10—Filed