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2 524 137

(13)

(51)

IPC

H01L21/311(2006-01-01)

(21) (22)

Application

2013101263/28, 2013-01-10

(24)

Start date

2013-01-10

(22)

Actual filing date

2013-01-10

(45)

Published

2014-07-27

(72)

Inventor

Ismailov Tagir AbdurashidovichShangereeva Bijke AlievnaShangereeva Sujkum Alievna

(73)

Holder

Federal'Noe Gosudarstvennoe Bjudzhetnoe Obrazovatel'Noe Uchrezhdenie Vysshego Professional'Nogo Obrazovanija Gosudarstvennyj Tekhnicheskij Universitet"

SEMICONDUCTOR CHEMICAL ETCHING METHOD Russian patent published in 2014 - IPC H01L21/311

Abstract RU 2524137 C1

FIELD: chemistry.

SUBSTANCE: chemical etching of a semiconductor surface is carried out in an etching agent consisting of the following components: hydrofluoric acid (HF), nitric acid (HNO₃) and acetic acid (CH₃COOH) in ratio of 1:6:3.

EFFECT: complete removal of the oxide formed on the surface of semiconductors and faster treatment.

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RU 2 524 137 C1

Authors

Ismailov Tagir Abdurashidovich

Shangereeva Bijke Alievna

Shangereeva Sujkum Alievna

Dates

2014-07-27—Published

2013-01-10—Filed