FIELD: instrumentation.
SUBSTANCE: invention relates to production of semiconductor devices and IC, particularly, to processing of substrates for sliding flaw detection purposes. Sliding line is revealed by dipping the substrates in etching agent consisting of the following components: hydrofluoric acid, nitric acid and acetic acid at the ratio of 3:6:3 at the room temperature, etching time making 90 seconds. Hardware represents a metallographic microscope with 40-200X magnification, Quantity of sliding line flaws makes 25±5 pc/mm.
EFFECT: homogeneous and integral surface of substrates, lower temperature and process duration.
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF DETECTING EPITAXIAL DISLOCATION DEFECTS | 2009 |
|
RU2403648C1 |
| METHOD FOR REMOVING CRYSTALLITES FROM SILICON WAFER SURFACE | 2005 |
|
RU2313851C2 |
| METHOD OF PROCESSING SILICON CRYSTALS | 2008 |
|
RU2376676C1 |
| SEMICONDUCTOR CHEMICAL ETCHING METHOD | 2013 |
|
RU2524137C1 |
| METHOD OF PROCESSING SUBSTRATES IN LIQUID ETCHING AGENT | 2009 |
|
RU2419175C2 |
| METHOD FOR ETCHING OF ALUMINIUM FILM (Al) | 2007 |
|
RU2363069C2 |
| METHODS FOR TREATMENT OF PLATE SURFACE PRIOR TO APPLICATION OF POLYIMIDE | 2008 |
|
RU2359357C1 |
| METHOD FOR TREATMENT BEFORE SPRAYING OF TITANIUM-GERMANIUM (Ti-Ge) | 2020 |
|
RU2786369C2 |
| COMPOSITION FOR SELECTIVE ETCH FOR CHEMICAL PROCESS OF THINNING OF SILICON PLATES | 2015 |
|
RU2615596C2 |
| ETCHING AGENT | 2003 |
|
RU2235806C1 |
