FIELD: energy.
SUBSTANCE: invention can be used in electronic industry for converting light energy into electrical energy. Method of making multi-junction solar cell according to invention involves successive formation of sub-element from Ge with a p-n junction, first tunnel diode, sub-element from Ga(In)As with a p-n junction, second tunnel diode, sub-element from GaInP with a p-n junction and a contact layer of GaAs, application of back ohmic contact of p-type on rear side of sub-element of Ge and application through a first mask of a first ohmic contact of n-type on contact layer of GaAs, removal by chemical etching through a second mask sections of contact layer of GaAs, where there is no first ohmic contact, and application on said sections an antireflective coating, creation of a stepped separation mesa by etching through a third mask of contact layer of GaAs and sub-element of GaInP at depth 0.2-0.4 mcm, deposition through a third mask of a first passivating coating, opening through a fourth mask first windows in first passivating coating, deposition of a second ohmic contact of p-type on opened first windows, etching through a fifth mask, closing second ohmic contact, sub-element of GaInP and sub-element of Ga(In)As to sub-element of Ge, deposition through fifth mask second passivating coating, opening through sixth mask second openings in second passivating coating, deposition of third ohmic contact n-type open second window, etching through seventh mask covering third ohmic contact, sub-element from Ge at a depth of 2-10 mcm and deposition through seventh mask third passivating coating.
EFFECT: invention enables to make multi-junction solar cell with high efficiency of converting solar radiation into electrical energy.
4 cl, 2 dwg, 4 ex
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Authors
Dates
2016-07-10—Published
2015-05-14—Filed