FIELD: physics.
SUBSTANCE: magnetoresistive memory cell comprises a remagnetisable layer and a non-remagnetisable layer separated by a barrier layer, and writing and reading means. The memory cell further includes a fastening layer made of p- or n-type semiconductor material, the next layer of semiconductor material with an opposite type of conductivity, forming a p-n junction, comprises an address line and a bit line, situated on both sides of the listed layers of the memory cell, means of generating write currents in the address and bit lines, reading means in the form of means of measuring electrical resistance of the memory cell, as well as means of setting polarity and the value of relative electrical bias between the address and bit lines.
EFFECT: simple technique of making a magnetoresistive memory cell.
2 cl, 1 dwg
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