NANOIMPRINT LITHOGRAPHY METHOD Russian patent published in 2010 - IPC G03F7/00 G01N29/04 

Abstract RU 2384871 C1

FIELD: physics.

SUBSTANCE: invention relates to microelectronics and can be used in nanoimprint lithography when making ordered arrays of magnetic and other structures. The method involves formation of a relief on a resist coating deposited on a substrate via nanoimprint lithography with application of exciting ultrasonic oscillations and an axial force onto a die. Ultrasonic oscillations arising when the die gets into contact with the resist are also detected in the substrate, from the intensity and/or phase and/or spectrum from which the degree of filling the die relief with the resist is determined.

EFFECT: invention enables monitoring formation of a relief without restrictions on optical properties of substrates.

7 cl, 1 dwg

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RU 2 384 871 C1

Authors

Nikitov Sergej Apollonovich

Filimonov Jurij Aleksandrovich

Vysotskij Sergej L'Vovich

Kozhevnikov Aleksandr Vladimirovich

Khivintsev Jurij Vladimirovich

Dzhumaliev Aleksandr Sergeevich

Nikulin Jurij Vasil'Evich

Veselov Aleksandr Georgievich

Dates

2010-03-20Published

2008-11-26Filed