FIELD: metallurgy.
SUBSTANCE: high density gallium oxide-zinc oxide sintered sputtering target for forming transparent electro-conductive film contains 20 mln-1 by weight or more of each of oxides of zirconium and oxide of aluminium, at that common contents are less than 250 mln-1, also value of volume resistance of target is 3.0 mOhm cy or less. Transparent electro-conductive film is formed on glass substrate by means of sputtering with implementation of gallium oxide-zinc oxide target. Film contains zirconium oxide and aluminium oxide, amount of each is 20 mln-1 by weight or more, while common contents are less, than 250 mln-1. Method of forming transparent electro-conductive film includes sputtering with implementation of gallium oxide-zinc oxide target.
EFFECT: production of transparent electro-conductive film capable to maintain preferable coefficient of transmission in optic region and electric conductivity.
7 cl, 1 tbl, 10 ex
| Title | Year | Author | Number |
|---|---|---|---|
| SPATTERING TARGET BASED ON GALLIUM OXIDE-ZINC OXIDE, METHOD OF THIN TRANSPARENT CONDUCTIVE FILM PRODUCTION AND THIN TRANSPARENT CONDUCTIVE FILM | 2006 |
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RU2376263C2 |
| SPUTTERING TARGET ON BASIS OF GALIM OXIDE-ZINC OXIDE METHOD OF FORMATION OF TREANSPARENT CONDUCTIVE FILM AND TREANSPARENT CONDUCTIVE FILM | 2006 |
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| TRANSPARENT MULTILAYER FILM | 2012 |
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| ANODE RESISTANT TO OXIDATION-REDUCTION | 2006 |
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| PROCESS OF PRODUCTION OF CLEAR CURRENT-CONDUCTING FILM BASED ON INDIUM AND TIN OXIDES | 1999 |
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RU2568554C2 |
| SMOOTHING METHOD FOR ALUMINUM FILM SURFACE ON DIELECTRIC SUBSTRATE | 2014 |
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RU2617890C2 |
