FIELD: metallurgy.
SUBSTANCE: target contains 20-2000 mln.s. wt, zirconium oxide allows bulk resistance 3.0 mΩ·cm or less. Formation method of transparent conductive film is implemented by means of diffusion of mentioned target. Transparent conductive film formed on substratum by means of diffusion of mentioned target, allows specific resistance 5.0 mΩ·cm or less.
EFFECT: increasing of conductivity and bulk density of target after sintering, prevention of formation of outgrowths and anomalous electrical discharges.
7 cl, 3 dwg, 3 tbl, 5 ex
| Title | Year | Author | Number |
|---|---|---|---|
| SPATTERING TARGET BASED ON GALLIUM OXIDE-ZINC OXIDE, METHOD OF THIN TRANSPARENT CONDUCTIVE FILM PRODUCTION AND THIN TRANSPARENT CONDUCTIVE FILM | 2006 |
|
RU2376263C2 |
| GALLIUM OXIDE/ZINC OXIDE SPUTTERING TARGET, METHOD OF FORMING TRANSPARENT ELECTRO-CONDUCTIVE FILM AND TRANSPARENT ELECTRO-CONDUCTIVE FILM | 2006 |
|
RU2389824C2 |
| METHOD FOR MAGNETRON SPUTTERING OF GALLIUM OXIDE IN DIRECT CURRENT BY DOPING IT WITH SILICON ATOMS | 2022 |
|
RU2799989C1 |
| METHOD FOR TRANSPARENT CONDUCTIVE COATING PRODUCTION | 2009 |
|
RU2451768C2 |
| METHOD OF PRODUCING OXIDE TARGET CONSISTING OF DylnO | 2018 |
|
RU2684008C1 |
| METHOD OF PRODUCING THIN TRANSPARENT CONDUCTIVE COATINGS BASED ON ZINC OXIDE DOPED WITH GALLIUM OXIDE | 2024 |
|
RU2833645C1 |
| METHOD OF PRODUCING HEAT-TREATED COATED ARTICLE WITH TRANSPARENT COATING OF CONDUCTING OXIDE FOR USE IN SEMICONDUCTOR DEVICE | 2007 |
|
RU2436743C2 |
| TRANSPARENT CONDUCTIVE ALLOY WHICH IS ALLOYED WITH INDIUM | 2015 |
|
RU2693982C2 |
| TARGET FOR ION-PLASMA SPUTTERING | 2013 |
|
RU2568554C2 |
| METHOD FOR PRODUCING THIN FILMS OF ZINC OXIDE OR TIN OXIDE, OR MIXED ZINC AND TIN (IV) OXIDES | 2020 |
|
RU2761193C1 |
