FIELD: metallurgy.
SUBSTANCE: target contains 20-2000 mln.s. wt, zirconium oxide allows bulk resistance 3.0 mΩ·cm or less. Formation method of transparent conductive film is implemented by means of diffusion of mentioned target. Transparent conductive film formed on substratum by means of diffusion of mentioned target, allows specific resistance 5.0 mΩ·cm or less.
EFFECT: increasing of conductivity and bulk density of target after sintering, prevention of formation of outgrowths and anomalous electrical discharges.
7 cl, 3 dwg, 3 tbl, 5 ex
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