FIELD: construction.
SUBSTANCE: spattering sintered target based on gallium oxide-zinc oxide contains 0.002-0.05 wt % of aluminium oxide. After sintering, the target's density is 5.55 g/cm3 or more. In specific cases of invention application, the spattering target includes 0.1-10 % wt of gallium oxide and has specific resistance 3.0 mΩ·cm or less. Method of thin transparent conductive film production based in gallium oxide- zinc oxide containing 0.002-0.05 wt % of aluminium oxide on substrate provides for spattering the above mentioned sintered target.
EFFECT: target provided with increased density after sintering preventing scales formation during spattered sedimentation; occurrence of abnormal electric charge and particles is diminished.
8 cl, 3 dwg, 3 tbl, 4 ex
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