FIELD: measurement equipment.
SUBSTANCE: invention relates to strain gauge pressure sensors based on thin-film nano- and microelectrical systems (NMEMS) with a bridge measurement circuit, designed for use in control, management and diagnostics systems of long-term functioning objects. Determination of temperature coefficients of strain gauge resistances is carried out in subranges of existing temperatures, which cover in combination the entire range of temperatures during operation, and determine accordingly the first and second additional criteria of stability according to ratios Ψτ01j=|(α2j+α4j)-(α1j+α3j)|, Ψτ02j(α)=αij, where α1j, α2j, α3j, α4j - temperature coefficient of resistance of 1, 2, 3, 4 strain gauge of NMEMS in j temperature range; αij - temperature coefficient of resistance of i strain gauge of NMEMS in j temperature range, and if |Ψτ01j|<|Ψτ01jmax|, Ψτ02jmin<Ψτ02j(α)<Ψτ02jmax, whereΨτ01jmax, Ψτ02jmin, Ψτ02jmax - accordingly, the limit permissible maximum value of the first additional stability criterion, the limit permissible minimum and maximum value of the second additional stability criterion of the i strain gauge of NMEMS in the j temperature range, which are detected by an experimental method according to statistic data for a specific sensor dimension type, then this assembly is transmitted for further operations.
EFFECT: increased time and temperature stability, resource, service life.
