SEMICONDUCTOR LIGHT-EMITTING DEVICES GROWN ON COMPOSITE WAFERS Russian patent published in 2014 - IPC H01L33/08 

FIELD: electricity.

SUBSTANCE: method for manufacture of a semiconductor light-emitting device includes growing a variety of III-nitride semiconductor structures on the wafer, at that each semiconductor structure includes a light-emitting layer placed between n-type area and p-type area; the wafer includes a base, a variety of areas of III-nitride material divided by depressions, at that depressions cover the whole thickness of III-nitride material which forms the above structures; a binding layer placed between the base and the variety of areas of III-nitride material; herewith the light-emitting layer of each semiconductor structure has spacing parameter more than 3.19 Angstrom units; and forming of conductive material which connects electrically two of III-nitride semiconductor structures. The semiconductor light-emitting device is also suggested.

EFFECT: invention provides improvement of operational efficiency and reliability due to exclusion of chip deformation and crystal defects in layers of III-nitride device.

15 cl, 8 dwg