FIELD: physics, semiconductors.
SUBSTANCE: invention relates to microelectronics, methods and techniques for controlling and analysing structures of integrated circuits, to dry plasma etching processes. A TiN layer is removed selectively to Al and SiO2 during reactive ion etching in CF4+O2 plasma with ratio of components (cm3/min) equal to 5:(30-40), working pressure of 20-30 Pa and high frequency power of 8-16 W/cm2, which is achieved by reducing the active area of the electrode by placing a quartz ring on it with thickness of over 3 mm in order to concentrate the plasma in the processing region.
EFFECT: increased selectivity of etching a layer of titanium nitride with respect to SiO2 while maintaining high selectivity of etching to Al.
2 cl, 1 ex
| Title | Year | Author | Number |
|---|---|---|---|
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|
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