FIELD: electricity.
SUBSTANCE: method of field CMOS transistor formation using dielectrics based on metal oxides with high inductive capacity and metal gates involves precipitation of dielectric layer with high inductive capacity rate on semiconductor substrate, application of insulation layer onto the dielectric layer and precipitation of metal gate. Surface of precipitated dielectric layer with high inductive capacity rate is annealed in vacuum at 500-800°C for 3-10 minutes under residual gas pressure under 10-5 mbar and further cooled down in vacuum.
EFFECT: control of switching voltage of field n-type and p-type transistor, reduction of switching voltage of field n-type and p-type transistor with switching voltage stability increased.
21 cl, 1 dwg, 1 tbl, 1 ex
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