FIELD: measuring equipment.
SUBSTANCE: invention relates to detection devices used for detection and measurement of content of trace impurities of oxygen and can be used for environmental monitoring. Sensor according to invention comprises a semiconductor base and a substrate. Semiconductor base is made from a polycrystalline film of zinc telluride, doped with gallium antimonide ((ZnTe)0.85(GaSb)0.15), and substrate is an electrode platform of a piezo crystal resonator.
EFFECT: invention provides with considerable simplification of manufacturing technology determination of content of oxygen with sensitivity, several times higher than that of existing sensors.
1 cl, 3 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| SEMICONDUCTOR AMMONIA TRACE CONTAMINATION SENSOR | 2015 |
|
RU2589455C1 |
| SEMICONDUCTOR GAS SENSOR OF TRACE OXYGEN MICRO IMPURITIES | 2019 |
|
RU2710523C1 |
| NANO-SEMICONDUCTOR GAS ANALYSER | 2010 |
|
RU2423688C1 |
| GAS ANALYSER OF CARBON OXIDE | 2009 |
|
RU2395799C1 |
| SEMICONDUCTOR GAS ANALYSER | 2009 |
|
RU2398219C1 |
| SEMICONDUCTOR SENSOR OF AMMONIA TRACE SUBSTANCES | 2016 |
|
RU2641016C2 |
| NITROGEN DIOXIDE INDICATOR | 2004 |
|
RU2274853C1 |
| NANOSEMICONDUCTOR GAS SENSOR | 2013 |
|
RU2530455C1 |
| SEMICONDUCTOR GAS SENSOR OF AMMONIA TRACE IMPURITIES | 2015 |
|
RU2607733C1 |
| SEMICONDUCTOR GAS SENSOR FOR OXYGEN TRACE SUBSTANCES | 2015 |
|
RU2610349C1 |
