FIELD: measuring equipment.
SUBSTANCE: invention relates to gas analysis, in particular to detecting devices used for recording and measuring content of trace oxygen. Invention can be used for environmental monitoring. Proposed sensor comprises semiconductor base and substrate. Semiconductor base is made from polycrystalline gallium antimonide film doped with zinc telluride (GaSb)0.95(ZnTe)0.05, and substrate is an electrode pad of a piezoelectric resonator. According to the invention, the sensor with considerable simplification of its manufacturing technology enables to determine content of oxygen with sensitivity several times greater than the sensitivity of known sensors.
EFFECT: high sensitivity and manufacturability of the sensor.
1 cl, 2 dwg
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|
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RU2641016C2 |
| SEMICONDUCTOR NITROGEN DIOXIDE SENSOR | 2019 |
|
RU2697920C1 |
