METHOD OF FORMING NANOSIZED CONDUCTING ELEMENT Russian patent published in 2013 - IPC H01L21/285 B82B3/00 

FIELD: physics.

SUBSTANCE: in the method of making a nanosized conducting element, the initial condensation phase is carried out in a medium of inert gases by magnetic sputtering of material from which a nanowire is formed onto a single-crystal chip for a predetermined time interval t, sufficient for detecting separate nucleation centres of the condensed material on steps. A substrate is placed such that the normal to its surface makes an angle with the direction of flow of the condensed atoms, a priori preventing formation of nucleation centres between steps, but sufficient for formation of nucleation centres of the condensed material on the steps. A microphotograph of the surface of the single-crystal chip is then made, from which density of nucleation centres of the condensed material on the steps and distance between the steps are determined, which are used to calculate the time of formation of the nanowire. The final phase of condensation of the material takes place during a time when there is no electrical conductivity between steps.

EFFECT: simple technique of forming solid-state one-dimensional nanostructures from different metals, semiconductors and alloys thereof, having environmental resistance and higher breakdown voltage.

2 cl, 4 dwg