METHOD OF DEPOSITING DIAMOND-LIKE CARBON FILM ON ORGANIC GLASS SUBSTRATE Russian patent published in 2010 - IPC C23C16/26 

FIELD: physics.

SUBSTANCE: nitrogen is fed into a vacuum chamber in which there is an ion and a magnetron source until pressure increases to 0.02-0.08 Pa and igniting glow-discharge plasma. A direct voltage ion source for accelerating the stream of nitrogen ions is placed between the cathode and anode and the stream of nitrogen ions cleans the surface of a substrate which is fixed relative the stream of ions and whose temperature is not above 80°C. After cleaning, nitrogen supply is cut and a mixture of nitrogen N₂ and toluene C₇H₈ vapour is fed into the vacuum chamber in ratio N₂: C₇H₈ (90-70)%:(10-30)% until pressure of 0.02-0.05 Pa is established in the chamber and a 40-60 nm thick buffer adhesive layer is deposited, whose refraction index is equal to 1.5-1.8, while power of the ion source varies between 40 W and 60 W and bias voltage of the substrate varies from +50 V to +100 V. Toluene vapour is then fed into the ion source until 0.05-0.1 Pa pressure is achieved and a 80-120 nm thick protective layer is deposited, whose refraction index equals 2.1-2.4, while bias voltage of the substrate varies from -100 V to -200 V and power of the ion source varies from 60 W to 80 W. Vapour of liquid C₆H₁₂NSi₂ is fed into the ion source until 0.1-0.2 Pa pressure is achieved and bias voltage ranging from -150 V to -250 V is applied across the substrate in order to deposit an anti-dirt layer of α-SiC_xN_y with thickness of 30-50 nm.

EFFECT: increased protection of organic substances from destructive and contaminating effects of the external medium.

2 cl, 6 dwg