VERTICAL FIELD-EFFECT TRANSISTOR Russian patent published in 1995 - IPC

FIELD: semiconductor technology. SUBSTANCE: vertical field-effect transistor has monocrystalline substrate made from semiconductor of n⁺⁺ type which carries ohmic contact of source and mesa-structure composed of two layers (upper layer from semiconductor of n type, power layer from semiconductor of n⁺⁺ type). Barrier contacts arranged in symmetry which are gates of transistor are fabricated along side faces of upper layer of mesa-structure. Upper face of mesa-structure has ohmic contact of drain. EFFECT: facilitated manufacture, improved operational characteristics. 2 dwg