FIELD: electronics, electrical engineering. SUBSTANCE: invention is meant for use in designs of high-power HF and SHF semiconductor devices ensuring uniformity of distributed heat. Contacts of emitter strips with metallization are formed on opposite edges of strips and surface resistance RRS of emitter strips meets definite condition. EFFECT: increased reliability. 1 dwg
Title | Year | Author | Number |
---|---|---|---|
HIGH-POWER RF AND MICROWAVE TRANSISTOR | 2009 |
|
RU2403650C1 |
POWERFUL HF- AND MF-TRANSISTOR STRUCTURE | 2020 |
|
RU2743674C1 |
HIGH-POWER RADIO-FREQUENCY TRANSISTOR | 2009 |
|
RU2403651C1 |
POWERFUL HIGH-FREQUENCY AND MICROWAVE TRANSISTOR | 1990 |
|
SU1679922A1 |
POWERFUL HF- AND MICROWAVE TRANSISTOR STRUCTURE | 2020 |
|
RU2743673C1 |
POWERFUL HF AND MICROWAVE TRANSISTOR STRUCTURE | 2022 |
|
RU2789511C1 |
HIGH-POWER BIPOLAR HIGH-FREQUENCY AND MICROWAVE TRANSISTOR | 2003 |
|
RU2229183C1 |
POWERFUL RF AND MICROWAVE TRANSISTOR STRUCTURE | 2022 |
|
RU2791863C1 |
POWER HIGH FREQUENCY (MICROWAVE FREQUENCY) TRANSISTOR STRUCTURE | 0 |
|
SU656432A1 |
POWERFUL HF- AND MICROWAVE TRANSISTOR STRUCTURE | 2020 |
|
RU2743675C1 |
Authors
Dates
1994-11-15—Published
1990-05-30—Filed