HIGH-POWER HF AND SHF TRANSISTOR STRUCTURE Russian patent published in 1994 - IPC

Abstract SU 1766220 A1

FIELD: electronics, electrical engineering. SUBSTANCE: invention is meant for use in designs of high-power HF and SHF semiconductor devices ensuring uniformity of distributed heat. Contacts of emitter strips with metallization are formed on opposite edges of strips and surface resistance RRS of emitter strips meets definite condition. EFFECT: increased reliability. 1 dwg

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SU 1 766 220 A1

Authors

Petrov B.K.

Bulgakov O.M.

Bezrjadina G.V.

Kochetkov A.I.

Kolesnikova L.I.

Dates

1994-11-15Published

1990-05-30Filed