METHOD FOR GENERATION OF NANOSTRUCTURES Russian patent published in 2010 - IPC H01L21/20 B82B3/00 

Abstract RU 2407102 C2

FIELD: electricity.

SUBSTANCE: in method for generation of nanostructures on substrate, by means of controlled laser action at sample via substrate with gap between sample and substrate, varying parametres of laser radiation and distance between substrate and sample, selection of nanoparticles is carried out, which in process of deposition form a nanostructure on substrate with gap from several microns to 2 mm in air atmosphere.

EFFECT: production of lengthy arrays of nanostructures with the possibility to provide efficient control of shape and alignment of synthesized particles, selection of light and heavy particles to obtain higher homogeneity of nanostructures.

3 cl, 1 dwg

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RU 2 407 102 C2

Authors

Antipov Aleksandr Anatol'Evich

Arakeljan Sergej Martirosovich

Kutrovskaja Stella Vladimirovna

Kucherik Aleksej Olegovich

Prokoshev Valerij Grigor'Evich

Dates

2010-12-20Published

2009-03-10Filed