METHOD FOR SYNTHESIS OF POLYCRYSTALLINE SILICON Russian patent published in 2011 - IPC C01B33/27 C30B29/06 C30B30/02 

Abstract RU 2409518 C1

FIELD: chemistry.

SUBSTANCE: invention can be used in production semiconductor materials, solar cells and in microelectronics. Silicon is deposited on substrates made from pure silicon, which are pre-heated with high frequency current.

EFFECT: obtaining highly pure silicon.

2 cl, 2 dwg

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Authors

Lopatin Vladimir Vasil'Evich

Ivanov Nikita Aleksandrovich

Soldatov Aleksej Ivanovich

Pavlova Marina Leonidovna

Dates

2011-01-20Published

2009-07-14Filed