FIELD: machine building.
SUBSTANCE: device can be used for epitaxial growth of layers at fabrication of semi-conductive instruments, devices of integral optics, at application of functional coating out of metal and silicon etc. The device consists of vacuum chamber (1) wherein there is arranged substrate holder (2) and resistive evaporator (3) of sputtered material connected to a current source with current inputs (4) interconnected with an insulator. The current conductors are located inside bellows (7) pressure tight installed in a wall of the chamber. Current conductors (4) are connected to a drive to ensure swinging motion of evaporator of sputtered material.
EFFECT: increased uniformity of thickness of sputtered layers and growth of uniform epitaxial layers on substrate of big area.
5 cl, 1 dwg
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