III-NITRIDE LIGHT-EMITTING DEVICES, GROWN ON STRUCTURE FOR REDUCING DEFORMATION Russian patent published in 2012 - IPC H01L33/16 

FIELD: physics.

SUBSTANCE: method of making a light-emitting device according to the invention involves growing a III-nitride structure on a substrate, said III-nitride structure comprising: a structure having a first layer 22 grown directly on the substrate, said first layer being essentially free from indium; a first essentially monocrystalline layer 24 grown on top of said first layer; a second layer 26 grown on top of the first essentially monocrystalline layer, where the second layer is not monocrystalline and contains indium; a second essentially monocrystalline layer 28 grown on top of the second layer 26; a third essentially monocrystalline layer lying between the first layer 22 and the second layer 26; and device layers grown on top of a template, wherein the device layers contain a III-nitride light-emitting layer, lying between an n-type and a p-type region. Another version of the method of making the light-emitting device is also provided.

EFFECT: reduced deformation in the device, particularly in the light-emitting layer.

19 cl, 19 dwg