LIGHT-EMITTING DEVICE BASED ON NITRIDE OF GROUP III ELEMENT, HAVING LOW-STRESS LIGHT-EMITTING LAYER (VERSIONS) Russian patent published in 2012 - IPC H01L33/32 

FIELD: physics.

SUBSTANCE: light-emitting device has a semiconductor structure based on a nitride of a group III element, having: a light-emitting layer lying between an n-type region and a p-type region; and a textured surface lying 1000 Å inside the light-emitting layer. Also disclosed is a second version according to which the light-emitting device has a masking layer with a plurality of holes; a structure based on a nitride of a group III element having a plurality of columns made from semiconductor material which match holes in the masking layer, wherein that plurality of columns is separated by insulating material, and where at least 90% of the cross-section of the plurality of columns in the plane parallel to the surface of the masking layer is occupied by columns, and a light-emitting layer lying between an n-type region and a p-type region.

EFFECT: invention reduces mechanical stress in the light-emitting layer.

15 cl, 11 dwg