FIELD: optics.
SUBSTANCE: invention relates to optoelectronics. According to invention surfaces in structure of light-emitting device, on which is grown layer with reduced mechanical stress, is shaped so that to enable growth layer with reduced mechanical stress in horizontal direction and so that it can take place, at least, partial relaxation of mechanical stresses. At that surface texturing is carried out within 1,000 Angstrom of light-emitting layer.
EFFECT: disclosed is a shape of surface in structure of light-emitting device, on which is grown layer with reduced mechanical stresses.
28 cl, 11 dwg
Title | Year | Author | Number |
---|---|---|---|
LIGHT-EMITTING DEVICE BASED ON NITRIDE OF GROUP III ELEMENT, HAVING LOW-STRESS LIGHT-EMITTING LAYER (VERSIONS) | 2007 |
|
RU2457581C2 |
III-NITRIDE LIGHT-EMITTING DEVICES, GROWN ON TEMPLATES TO REDUCE STRAIN | 2007 |
|
RU2454753C2 |
LIGHT-EMITTING DEVICE OF ELEMENTS OF III-V GROUPS THAT INCLUDES LIGHT-EMITTING STRUCTURE | 2010 |
|
RU2559305C2 |
BORON-CONTAINING III-NITRIDE LIGHT-EMITTING DEVICE | 2010 |
|
RU2523747C2 |
III-NITRIDE LIGHT-EMITTING DEVICES, GROWN ON STRUCTURE FOR REDUCING DEFORMATION | 2007 |
|
RU2466479C2 |
SEMICONDUCTOR LIGHT-EMITTING DEVICES GROWN ON COMPOSITE WAFERS | 2009 |
|
RU2515205C2 |
METHOD OF MAKING LIGHT-EMITTING DEVICES BASED ON GROUP III NITRIDES GROWN ON STRESS RELIEF TEMPLATES | 2007 |
|
RU2470412C2 |
III-NITRIDE LIGHT-EMITTING DEVICE HAVING LIGHT-EMITTING AREA WITH DOUBLE HETEROSTRUCTURE | 2006 |
|
RU2412505C2 |
LIGHT-EMITTING DEVICE HAVING PHOTONIC CRYSTAL AND LUMINESCENT CERAMIC | 2008 |
|
RU2479072C2 |
SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH LIGHT OUTPUT STRUCTURES | 2008 |
|
RU2491682C2 |
Authors
Dates
2016-07-20—Published
2012-01-30—Filed