LIGHT-EMITTING DEVICE BASED ON NITRIDE OF GROUP III ELEMENT WITH LIGHT-EMITTING LAYER WITH REDUCED VOLTAGES Russian patent published in 2016 - IPC H01L33/22 

Abstract RU 2591246 C2

FIELD: optics.

SUBSTANCE: invention relates to optoelectronics. According to invention surfaces in structure of light-emitting device, on which is grown layer with reduced mechanical stress, is shaped so that to enable growth layer with reduced mechanical stress in horizontal direction and so that it can take place, at least, partial relaxation of mechanical stresses. At that surface texturing is carried out within 1,000 Angstrom of light-emitting layer.

EFFECT: disclosed is a shape of surface in structure of light-emitting device, on which is grown layer with reduced mechanical stresses.

28 cl, 11 dwg

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RU 2 591 246 C2

Authors

I Sungsoo

Devid Orelen Dzh. F.

Gardner Natan F.

Krejms Majkl R.

Romano Linda T.

Dates

2016-07-20Published

2012-01-30Filed