METHOD OF PRODUCING GAS-SENSITIVE MATERIAL FOR NITROGEN DIOXIDE SENSOR Russian patent published in 2011 - IPC C08J5/18 B32B27/06 C08L33/20 C08L101/12 C08K3/16 B32B33/00 

FIELD: chemistry.

SUBSTANCE: invention relates to a method of producing electroconductive gas-sensitive material for a nitrogen dioxide sensor. The method of producing gas-sensitive material involves preparation of a film-forming solution from polyacrylonitrile and copper (II) chloride CuCl in dimethylformamide, which is deposited through centrifuging onto a substrate made from quartz glass and undergoes drying and infrared annealing successively in two steps: on air at temperature 150°C for 15 minutes and at 200°C for 15 minutes; and in an argon atmosphere at T=150°C, 200°C for 15 minutes; and then at T=500-800°C for 5 minutes.

EFFECT: obtaining gas-sensitive material which is sensitive to nitrogen dioxide with semiconductor properties from material which has dielectric properties using infrared annealing.

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