FIELD: chemistry.
SUBSTANCE: invention relates to a method of producing electroconductive gas-sensitive material for a nitrogen dioxide sensor. The method of producing gas-sensitive material involves preparation of a film-forming solution from polyacrylonitrile and copper (II) chloride CuCl in dimethylformamide, which is deposited through centrifuging onto a substrate made from quartz glass and undergoes drying and infrared annealing successively in two steps: on air at temperature 150°C for 15 minutes and at 200°C for 15 minutes; and in an argon atmosphere at T=150°C, 200°C for 15 minutes; and then at T=500-800°C for 5 minutes.
EFFECT: obtaining gas-sensitive material which is sensitive to nitrogen dioxide with semiconductor properties from material which has dielectric properties using infrared annealing.
3 tbl, 2 dwg
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Authors
Dates
2011-03-27—Published
2009-05-14—Filed