MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE Russian patent published in 2011 - IPC H01L21/322 

FIELD: electricity.

SUBSTANCE: in manufacturing method of semiconductor structure, which involves processes of ionic alloying and formation of getter in silicon plate, getter is formed by implantation of oxygen atoms to silicon plate with concentration of (1.6-1.8)·10¹⁶ cm^-3 with further annealing of silicon plates during 4-6 hours in dry oxygen at temperature of 1100-1200°C and accelerating impurity to n-area during 6-9 hours in nitrogen atmosphere at temperature of 600-800°C.

EFFECT: decrease of leakage current values and suppression of parasite thyristor effect in semiconductor structures, which provides processibillity; improvement of parametres of structures, quality and increase in yield ratio percentage.

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