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2 528 574

(13)

(51)

IPC

H01L21/76(2006-01-01)

(21) (22)

Application

2013110953/28, 2013-03-12

(24)

Start date

2013-03-12

(22)

Actual filing date

2013-03-12

(45)

Published

2014-09-20

(72)

Inventor

Mustafaev Gasan AbakarovichMustafaev Abdulla GasanovichMustafaev Arslan Gasanovich

(73)

Holder

Federal'Noe Gosudarstvennoe Bjudzhetnoe Obrazovatel'Noe Uchrezhdenie Vysshego Professional'Nogo Obrazovanija Gosudarstvennyj Universitet Im. Kh.M. Berbekova"

METHOD TO MANUFACTURE SEMICONDUCTOR DEVICE ISOLATIONS Russian patent published in 2014 - IPC H01L21/76

Abstract RU 2528574 C1

FIELD: electricity.

SUBSTANCE: method to manufacture semiconductor device isolations involves formation of a highly doped p+ zone inside a p-well at its edge by the implantation of boron ions with the energy of 100-120 keV, concentration of 1.6·1018 cm^-3 with the following annealing under the temperature of 400-500°C during 30 minutes.

EFFECT: increased breakdown voltage of semiconductor device isolations, improved fabricability, quality and percentage yield of serviceable devices.

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RU 2 528 574 C1

Authors

Mustafaev Gasan Abakarovich

Mustafaev Abdulla Gasanovich

Mustafaev Arslan Gasanovich

Dates

2014-09-20—Published

2013-03-12—Filed