FABRICATION OF SEMICONDUCTOR STRUCTURE Russian patent published in 2014 - IPC H01L21/265 

FIELD: physics.

SUBSTANCE: invention relates to semiconductor technology, particularly, to production of semiconductor structures with lower density of defects. In compliance with this method, ions of boron of 25 keV energy are embedded in pre-amorphised surface of silicon substrate by silicon ions. This allows formation of reproducible fine highly doped p-layers with minor crystalline abnormalities and better electrical parameters. Then two-step annealing is carried out.

EFFECT: decreased density of defects, perfected structure parameters, higher quality and yield.

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