METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE Russian patent published in 2023 - IPC H01L21/76 

FIELD: production of semiconductor devices.

SUBSTANCE: invention is related in particular to the technology of manufacturing a semiconductor structure with reduced defectiveness. The technology of the method is as follows: silicon wafers with hidden silicon layers doped with Sb and made on Si substrates are implanted with carbon using CCl₄ at gas mixture velocity in the reactor of 5 nm/s, growth temperature of 1200°C, deposition rate of 12 nm/s, with carbon concentration of 2*10¹⁸cm^-3, followed by annealing at a temperature of 450°C for 15 min in an argon atmosphere. Doping with carbon makes it possible to compensate for the lattice deformations that occur in Si during doping caused by Sb, and Si layers free from defects are obtained.

EFFECT: invention provides reduction of defectiveness, improvement of manufacturability, improvement of instrument parameters, improvement of quality and increase in yield percentage.

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