FIELD: physics.
SUBSTANCE: invention discloses systems, circuits and methods for a programme-controlled circuit which employs spin-torque transfer magnetic RAM (STT-MRAM) technology. Memory elements on a magnetic tunnel junction can be formed into input matrices and output matrices. The input matrices and output matrices can be merged to form composite matrices which enable to realise logic functions.
EFFECT: broader functionalities.
20 cl, 10 dwg, 3 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| SPIN-TORQUE TRANSFER MAGNETORESISTIVE MRAM MEMORY ARRAY INTEGRATED INTO VLSIC CMOS/SOI WITH n+ AND p+ POLYSILICON GATES | 2012 |
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| STORAGE DEVICE FOR RESISTANCE-BASED MEMORY APPLICATIONS | 2009 |
|
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| MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE WITH SHARED SOURCE LINE | 2008 |
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| SEMICONDUCTOR MEMORY | 2014 |
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