METHOD OF PRODUCING SUPER-THIN SILICON FILMS ON SAPPHIRE Russian patent published in 2011 - IPC H01L21/20 B82B3/00 

FIELD: physics.

SUBSTANCE: in the method of producing super-thin silicon films on sapphire objects having a sapphire substrate and an initial silicon layer whose thickness is considerably greater than the thickness of the obtained thin silicon films, a large part of the silicon layer undergoes amorphisation followed by solid-phase recrystallisation where the remaining part of the silicon layer not affected by amorphisation is used as the inoculating layer, where recrystallisation is carried out using an inoculating layer adjacent to the silicon-sapphire boundary surface, and thickness of this inoculating layer during amorphisation is made as minimum as possible without deterioration of the quality of the recrystallised layer.

EFFECT: low energy for implantation during amorphisation, avoiding radiation defects in the sapphire substrate and consequently avoiding autodoping of the silicon layer with aluminium atoms during recrystallisation.