FIELD: process engineering.
SUBSTANCE: invention relates to semiconductor technology, particularly, to production of semiconductor structures with lower density of defects. Silicon structures are processes at sapphire with silicon epi by hydrogen ions in inert medium at energy of 25-30 keV in amount of (3-5)·1015H+/cm2 with subsequent thermal annealing at 1000°C for 30-60 minutes.
EFFECT: decreased density of defects, perfected structure parameters, higher quality and yield.
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