METHOD OF MAKING SEMICONDUCTOR STRUCTURE Russian patent published in 2018 - IPC H01L21/20 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the field of semiconductor device manufacturing technology, in particular to the technology of obtaining silicon films on sapphire with reduced defectiveness. In the method for manufacturing the semiconductor structure, the substrate is annealed in an atmosphere of hydrogen for 2 hours at a temperature of 1,250 °C with subsequent build-up of silicon films by pyrolysis of silane in a hydrogen atmosphere at a temperature of 1,000–1,030 °C in two stages: first, an n+-layer of silicon doped from PH₃, is grown with an impurity concentration of 10²⁰ cm^-3, with a growth rate of 5 mcm/min, then, an n-layer of silicon doped with AsH₃, is build-up with an impurity concentration of 4*10¹⁵ cm^-3, with a growth rate of 2.3 mcm/min, followed by thermal annealing at a temperature of 600 °C for 15 minutes in a hydrogen atmosphere. Next, n-channel field effect transistors and drain, source and gate electrodes are formed using standard technology.

EFFECT: proposed method for fabricating a semiconductor structure makes it possible to increase the percentage of yield of suitable devices and improve their reliability.

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