FIELD: metallurgy.
SUBSTANCE: procedure consists in forming thin film layer of EuSx on substrate by sedimentation EuS and sulphur from different targets in vacuum and in successive vacuum annealing of formed film at temperature facilitating sulphur desorption. Also, sedimentation of sulphur is performed before or in the process of EuS sedimentation.
EFFECT: increased quality of film, reduced expenditures for its production.
3 cl, 3 dwg
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